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Power Transistors
2SD2138, 2SD2138A
Silicon NPN triple diffusion planar type Darlington
Unit: mm
For power amplification Complementary to 2SB1418 and 2SB1418A I Features
* High forward current transfer ratio hFE which has satisfactory linearity * Allowing supply with the radial taping
13.00.2
4.20.2
10.00.2 1.00.2
5.00.1
2.50.1
1.20.1 1.480.2
90
C 1.0 2.250.2
18.00.5 Solder Dip
0.650.1 0.650.1 0.350.1 1.050.1 0.550.1 2.50.2 2.50.2 123 0.550.1
I Absolute Maximum Ratings TC = 25C
Parameter Collector to base voltage Collector to emitter voltage 2SD2138 2SD2138A 2SD2138 2SD2138A VEBO ICP IC TC = 25C Ta = 25C Tj Tstg PC VCEO Symbol VCBO Rating 60 80 60 80 5 4 2 15 2 150 -55 to +150 C C V A A W V Unit V
Emitter to base voltage Peak collector current Collector current Collector power dissipation
1: Emitter 2: Collector 3: Base MT-4 (MT4 Type Package)
Internal Connection
C B
Junction temperature Storage temperature
E
I Electrical Characteristics TC = 25C
Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD2138 2SD2138A hFE1 hFE2 * Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Turn-off time Note) *: Rank classification Rank hFE2 Q R VBE VCE(sat) fT ton toff VCE = 4 V, IC = 1 A VCE = 4 V, IC = 2 A VCE = 4 V, IC = 2 A IC = 2 A, IB = 8 mA VCE = 10 V, IC = 0.5 A, f = 1 MHz IC = 2 A, IB1 = 8 mA, IB2 = -8 mA, VCC = 50 V 20 0.4 4 2SD2138 2SD2138A 2SD2138 2SD2138A IEBO VCEO ICEO Symbol ICBO Conditions VCE = 60 V, IE = 0 VCE = 80 V, IE = 0 VCE = 30 V, IB = 0 VCE = 40 V, IB = 0 VEB = 5 V, IC = 0 IC = 30 mA, IB = 0 60 80 1 000 2 000 10 000 2.8 2.5 V V MHz s s Min Typ Max 100 100 100 100 100 A V A Unit A
Forward current transfer ratio
2 000 to 5 000 4 000 to 10 000
1
2SD2138, 2SD2138A
PC T a
20 6 (1) TC=Ta (2) Without heat sink (PC=2.0W) TC=25C 5
Power Transistors
IC VCE
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=250 30 10 3 1 25C 100C 0.3 0.1 0.03 0.01 0.01 0.03 TC=-25C
VCE(sat) IC
Collector power dissipation PC (W)
Collector current IC (A)
15 (1)
IB=2mA 4
10
3
1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA
2
0.2mA
5
1 (2) 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12
0.1
0.3
1
3
10
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
IC VBE
6 VCE=4V 5 105 25C
hFE IC
Collector output capacitance Cob (pF)
VCE=4V 1000
Cob VCB
IE=0 f=1MHz TC=25C
Forward current transfer ratio hFE
Collector current IC (A)
TC=100C 4
-25C
TC=100C 104
300
25C
100
3
30
-25C 103
2
10
1
3
0 0 1 2 3 4
102 0.01 0.03
1 0.1 0.3 1 3 10 1 3 10 30 100
Base to emitter voltage VBE (V)
Collector current IC (A)
Collector to base voltage VCB (V)
Area of safe operation (ASO)
100 30 Non repetitive pulse TC=25C 10000
Rth(t) t
Note: Rth was measured at Ta=25C and under natural convection. (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink
10 ICP 3 1 0.3 10ms 0.1 0.03 0.01 1 3 10 30 IC DC t=1ms
Thermal resistance Rth(t) (C/W)
Collector current IC (A)
1000
100 (1) (2) 10
2SD2138A
2SD2138
1
100
300
1000
0.1 10-4
10-3
10-2
10-1
1
10
102
103
104
Collector to emitter voltage VCE (V)
Time t (s)
2
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2001 MAR

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